Compound semiconductor device and fabrication method of producing the

Abstract

An improved compound semiconductor device, such as a distributed Bragg reflection type or distributed feedback type laser device, having regions with and regions without a diffraction grating. The device is fabricated without exhibiting surface irregularities by growing a first epitaxial layer on a semiconductor substrate, forming a fine uneven structure on the surface of the first epitaxial layer and growing a second epitaxial layer on the fine uneven structure. The fine uneven structure has a surface shape which exposes crystal orientations that facilitate subsequent epitaxial growth. In one embodiment, portions of the fine uneven structure are formed as a diffraction grating while other portions are formed insufficiently uneven to have a diffraction effect for any usable light wavelength. The fine uneven structure may suitably be shallow, have a short pitch or be provided at a slant to the light propagation direction, in order to preclude a diffraction effect.