The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 1997
Filed:
Apr. 05, 1995
Akira Taniyama, Odawara, JP;
Makoto Morijiri, Kanagawa-ken, JP;
Haruko Tanaka, Odawara, JP;
Isamu Yuito, Odawara, JP;
Eiji Ashida, Hitachiota, JP;
Hiroaki Koyanagi, Hadano, JP;
Hideo Tanabe, Chigasaki, JP;
Tetsuo Kobayashi, Kanagawa-ken, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A magnetic domain controlling film for controlling the magnetic domain of a magnetoresistive film is formed by a patterning technique on a lower insulating film formed on a lower shield film. The magnetoresistive film is formed on the magnetic domain controlling film for converting a magnetic signal from a magnetic recording medium into an electrical signal using the magnetoresistive effect. A resist pattern is formed by the lift-off method on the magnetoresistive film in such a fashion as to leave a region of the magnetoresistive film corresponding to the tracks of the magnetic recording medium. A magnetoresistive element is formed by ion milling leaving only the portion of the magnetoresistive film corresponding to the tracks. An insulating layer is formed on the resist pattern, on the upper surface region of the lower insulating film other than the portion thereof right under the magnetic domain controlling film reduced in thickness by ion milling, and on the upper surface region of the magnetic domain controlling film other than the portion thereof right under the magnetoresistive film. An electrode film is formed on the insulating layer, after which the resist pattern is removed. The insulating layer is contiguously deposited on the upper surface region formed in a thin layer of the lower insulating film and on a part of the upper surface region formed in a thin layer of the magnetic domain controlling film.