The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 1997
Filed:
Mar. 15, 1996
Seigo Suzuki, Tokyo, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A plurality of stages of MOS gate circuits are connected in series and are driven with a 2-phase AC power source. The alternating speed of the power source is slower than the operation speed of internal circuit elements of the MOS gate circuits. A cutoff device such as a transistor is arranged on each side of each of the MOS gate circuits and is connected to the power source. The cutoff devices of each MOS gate circuit are conductive only when one phase of the power source is at high potential and the other at low potential. When the MOS gate circuit of a given stage (N.sub.i) is inactive, the MOS gate circuit of the next stage (N.sub.i+1) holds charge, to reduce an energy loss.