The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 1997
Filed:
Nov. 14, 1995
Applicant:
Inventors:
Nalin K Patel, Cambridge, GB;
Jeremy H Burroughes, Cambridge, GB;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 27 ; 257 24 ; 257194 ;
Abstract
A semiconductor device according to the invention is characterized by comprising a heterostructure which comprises an active layer in which carriers can flow within a conduction channel, the heterostructure including a recessed region in which part of the conduction channel is disposed and substantially in the same plane as a pair of side gate, thereby defining a restricted conduction region of the conduction channel.
Patel, Nalin. (1997). Semiconductor device and method for its manufacture (U.S. Patent No. 5701017). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5701017
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile