The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 1997
Filed:
Nov. 24, 1995
Applicant:
Inventors:
Jeremy H Burroughes, Cambridge, GB;
Donald D Arnone, Cambridge, GB;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257 24 ; 257 25 ; 257192 ;
Abstract
A semiconductor device according to the invention is characterized by comprising a stacked structure which has a plurality of layers for providing rear barrier confinement potentials, an oblique side surface intersecting edges of the plurality of layers, at least one layer overlying the oblique side such that carriers can flow in a plane parallel to the oblique side surface, and narrowing means for causing carriers to flow over the edges of the plurality of layers, only in a direction of the oblique side surface.