The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 1997
Filed:
Jan. 19, 1996
Applicant:
Inventors:
Mitsuhiko Ogihara, Tokyo, JP;
Yukio Nakamura, Tokyo, JP;
Masumi Koizumi, Tokyo, JP;
Masumi Taninaka, Tokyo, JP;
Assignee:
Oki Electric Industry Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437167 ; 437160 ; 437234 ;
Abstract
A pn-junction element is formed in a compound semiconductor substrate by depositing an aluminum-nitride film on the surface of the substrate, patterning the aluminum-nitride film to form a diffusion mask, depositing a diffusion source film on the diffusion mask, diffusing an impurity from the diffusion source film into the substrate, and removing the diffusion source film with buffered hydrofluoric acid. Electrode lines can then be formed directly on the aluminum-nitride diffusion mask, which is not etched by buffered hydrofluoric acid.