The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 1997

Filed:

Aug. 23, 1996
Applicant:
Inventors:

Kouichi Ichimura, Yokohama, JP;

Kazushige Yamamoto, Yokohama, JP;

Nobuhiro Gemma, Yokohama, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 39 ;
Abstract

A method of manufacturing a solid-state material comprises a first step of preparing a starting material having an energy-level structure with at least first, second and third energy levels, each having a specific level width, the first energy level is the lowest of the three levels, one of the second and third energy levels changing the energy-level structure when light having a predetermined wavelength is applied to the material, and the energy-level structure remaining so changed even after the application of the light, and a second step of irradiating the starting material with a first coherent light beam resonating with transition between the first and third energy levels and a second coherent light beam resonating with transition between the second and third energy levels in a case that the third level is a level which changes the energy level structure, thereby changing a distribution of angular frequency in a plane one axis of which is a first transition angular frequency corresponding to the transition between the first and third energy levels and the other axis of which is a second transition angular frequency corresponding to the transition between the second and third energy levels, thereby to form a solid-state material having new distribution of transition angular frequency, wherein the second step includes a step of setting a spectral width of the first light beam, Rabi characteristic angular frequency for transition of the second light beam and Rabi characteristic angular frequency for transition of the second light beam within one of two inhomogeneous widths for the first and second transition angular frequencies which is broader than the other.


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