The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 1997
Filed:
Apr. 24, 1996
Applicant:
Inventor:
Muneo Fukaishi, Tokyo, JP;
Assignee:
NEC Corporation, , JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257420 ; 257 66 ; 257 76 ; 257192 ; 257245 ; 257249 ; 257254 ; 257284 ; 257472 ; 257773 ;
Abstract
A metal-semiconductor type field effect transistor has a Y-letter shaped gate electrode standing on an active layer, and the Y-letter shaped gate electrode prevents piezoelectric charges induced beneath both ends of the wing portions thereof from undesirable merger so as to restrict variation of the threshold regardless of the orientation of the Y-letter shaped gate electrode.
Quick Actions:
Fukaishi, Muneo. (1997). Compound semiconductor field effect transistor free from piezoelectric (U.S. Patent No. 5698888). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5698888
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile