The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 1997
Filed:
May. 28, 1996
Applicant:
Inventor:
Tomohisa Mizuno, Kanagawa-ken, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257344 ; 257408 ; 257410 ; 257900 ;
Abstract
An MOS field effect transistor is of a lightly doped drain structure. In the transistor, an insulation layer is located on the side wall of a gate electrode. This insulation layer is formed of tantalum oxide, which has a high dielectric constant. Between this insulation layer and a drain region, another insulation layer is formed such that it has a thickness sufficiently greater than the length of the mean free path of the hot carriers which are generated in the vicinity of the drain region.