The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 1997
Filed:
Jan. 24, 1997
Hajime Sasaki, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A method of fabricating a microwave semiconductor integrated circuit includes fabricating an integrated circuit including an FET and a wiring surrounding the FET on the front surface of the substrate; forming an insulating film covering a first region of the substrate where the FET is fabricated and a second region of the substrate where the wiring is fabricated; forming a thin resist film on the insulating film covering the first region of the substrate; removing a portion of the insulating film from the second region of the substrate opposite the wiring; forming a metal film containing a gas, covering the thin resist film and contacting, at a peripheral portion, the wiring exposed by removal of the insulating film; forming a hole in from the rear surface of the substrate to reach the thin resist film; forming a space between the metal film and the insulating film by dissolving the thin resist film with a solvent applied through the hole; closing the opening of the hole at the rear surface of the substrate; heating the metal film to make the metal film discharge the gas, thereby expanding the metal film to such an extent that a space produced between the metal film and the gate electrode of the FET does not cause parasitic capacitance between the metal film and the gate electrode.