The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 1997
Filed:
Apr. 21, 1995
Applicant:
Inventors:
Rointan F Bunshah, Playa del Rey, CA (US);
Shyankay R Jou, Santa Monica, CA (US);
Hans J Doerr, Westlake Village, CA (US);
Assignee:
The Regents of the University of California, Oakland, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
C01B / ;
U.S. Cl.
CPC ...
428408 ; 423446 ; 156D / ;
Abstract
Doped and undoped polycrystalline and noncrystalline diamond films produced by plasma enhanced chemical transport emit electrons into a vacuum in response to an applied electrical field. The field required to create emission is less than 20 V/.mu.m for doped polycrystalline films, can be in the range of 5 to 8 volts/.mu.m for undoped nanocrystalline films and may be 3 volts/.mu.m or less for doped nanocrystalline films. These materials exhibit emission properties which are continuous across the whole surface of the film.