The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 1997
Filed:
Apr. 22, 1996
Hideaki Kawamoto, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A wafer (11) is conveyed in a vacuum from an Al etching chamber after the Al etching and is fed into an ashing chamber (15) without coming into contact with the atmosphere. After the wafer (11) was conveyed, CH.sub.3 OH gas of 200 sccm is first introduced by a valve (30a) and a pressure is adjusted to 1.2 Torr. Subsequently, a microwave current of 450 mA is supplied, thereby forming a plasma. The wafer (11) is processed by a down-flow system of a CH.sub.3 OH plasma. The supply of the CH.sub.3 OH gas is stopped by closing the valve (30a). Next, oxygen gas of 400 sccm is introduced by opening a valve (30b). A microwave current of 450 mA is supplied at a pressure of 1.2 Torr, thereby forming a plasma. A resist on the wafer 11 is ashed and eliminated by a down-flow process of an oxygen plasma. By those processes, the corrosion prevention and the resist ashing can be perfectly executed.