The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 1997
Filed:
Jun. 07, 1995
Applicant:
Inventors:
Manlio Sergio Cereda, Lomagna, IT;
Giancarlo Ginami, Bergamo, IT;
Assignee:
SGS-Thomson Microelectronics S.r.l., Agrate Brianza, IT;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257385 ; 257 71 ; 257316 ; 257377 ; 257382 ; 257398 ; 257399 ; 257412 ; 257519 ;
Abstract
A process for producing integrated circuits including the steps of: selectively growing field insulating regions of insulating material extending partly inside a substrate having a given type of conductivity; depositing a polycrystalline silicon layer on the substrate; shaping the polycrystalline silicon layer through a mask; and selectively implanting ions of the same conductivity type as the substrate, using the shaping mask, through the field insulating regions. The implanted ions penetrate the substrate and form channel stopper regions beneath the field insulating regions.