The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 1997

Filed:

Jul. 29, 1996
Applicant:
Inventors:

Philippe Godignon, Barcelona, ES;

Jean-Francedilla.ois De Palma, Vaulx en Velin, FR;

Rene Deshayes, Saint Priest, FR;

Juan Fernandez, Rubi, ES;

Jose Millan, Sabadell, ES;

Assignees:

Ferraz, Lyons, FR;

Centro Nacional de Microelectronica, Bellaterra, ES;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257109 ; 257173 ; 257174 ;
Abstract

A current limiter component constituted by a semiconductor bar or wafer doped in four layers (P, N, P, N) between its anode and cathode. The doping characteristics and the dimensional characteristics of the bar are adjusted to obtain a characteristic current to voltage curve which initially increases as voltage and current increases in the manner of a diode followed by a part constituting a current limiting plateau wherein the plateau reflects that the current remains fixed until the voltage reaches a breakdown voltage.


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