The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 1997
Filed:
Sep. 05, 1996
Applicant:
Inventors:
Robert Cort Haddon, Dover, NJ (US);
Arthur Foster Hebard, Bernardsville, NJ (US);
Thomas Theodorus Palstra, New Providence, NJ (US);
Assignee:
Lucent Technologies Inc., Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257431 ; 257 57 ;
Abstract
An n-channel field-effect transistor is fabricated utilizing a thin-film fullerene (for example, C.sub.60) as the active element. The fullerene film is deposited onto a device substrate in an ultra-high-vacuum chamber and is thus substantially oxygen-free. Subsequently, while still in the chamber, the fullerene film is encapsulated with a material that is impervious to oxygen.