The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 1997
Filed:
Mar. 06, 1995
Applicant:
Inventors:
Charles E Weitzel, Mesa, AZ (US);
Karen E Moore, Phoenix, AZ (US);
Christine Thero, Scottsdale, AZ (US);
Assignee:
Motorola, Schaumburg, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257280 ; 257 77 ;
Abstract
A lateral MESFET (10,20) utilizes a drain (17) and a source (18) damage termination layer to improve the breakdown voltage of the MESFET (10,20). The source (18) and drain (17) damage termination layers are very shallow to prevent interfering with lateral current flow in the channel layer (12). The source (18) and drain (17) damage termination layers are formed by implanting large inert ions using high implant doses and low implantation energies.
Quick Actions:
Weitzel, Charles. (1997). Mesfet having a termination layer in the channel layer (U.S. Patent No. 5693969). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5693969
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile