The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 1997
Filed:
Jun. 06, 1995
Salvador H Talisa, Edgewood, PA (US);
Daniel L Meier, Forest Hills, PA (US);
Northrop Grumman Corporation, Los Angeles, CA (US);
Abstract
A termination for a high-temperature superconductive thin-film microwave device formed on the obverse side of a substrate with the reverse side of the substrate having a ground plane. The termination can include a thin-film resistor being integral with an operative component, with the substrate being a preselected dielectric substrate. The resistor can have an epitaxially-formed layer of molybdenum metal of a first preselected thickness on the obverse side, and an epitaxially-formed layer of titanium metal of a second preselected thickness thereon. The termination includes a epitaxially-formed thin-film capacitor integral with the resistor. The capacitor can have a layer of titanium metal formed on a portion of the obverse side with a layer of gold metal formed thereon. The substrate can be lanthanum aluminate, and the high-temperature superconductive film can be a yttrium-barium-copper-oxide film. The ground plane can be made of a high-temperature superconductive film and annealed gold.