The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 1997
Filed:
Dec. 19, 1994
Jin-Hee Lee, Daejeon, KR;
Sang-Soo Choi, Daejeon, KR;
Hyung-Sup Youn, Daejeon, KR;
Chul-Soon Park, Daejeon, KR;
Hyung-Jun Yoo, Daejeon, KR;
Hyung-Moo Park, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
A method for making a T-shaped gate of a field effect transistor is disclosed. The method includes the steps of sequentially depositing first and second photoresist layers on a semiconductor substrate and performing an exposure using electron beams having different energy, one of the electron beams having a first energy to lightly expose only the second photoresist layer and the other of the electron beams having a second energy to lightly expose all of the first and second layers. The invention reduces gate resistance and parasitic capacitance of the T-shaped gate.