The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 1997
Filed:
Nov. 09, 1995
Applicant:
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 21 ; 437 67 ; 437 72 ; 437203 ;
Abstract
A method for forming a transistor comprising the steps of: forming a trench in a substrate; filling an insulating layer in the lower portion of said trench except for the upper portion thereof; filling a conductive layer in the upper portion of said trench and on said insulating layer for a channel of the said transistor; forming a gate oxide layer on the resulting structure; and forming a gate electrode on said gate oxide layer; and implanting impurity ions into said substrate to form a source/drain region.