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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5691661 B1

PDFFull Text
Date of Patent:
Nov. 25, 1997

Filed:

Jun. 02, 1995

Pulse generating circuit and a semiconductor memory device provided with

Applicant:
Inventors:

Tatsuya Fukuda, Hyogo-ken, JP;

Shigeru Mori, Hyogo-ken, JP;

Masanori Hayashikoshi, Hyogo-ken, JP;

Seiji Sawada, Hyogo-ken, JP;

Assignee:

Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;

Attorney:

Lowe, Price, LeBlanc & Becker

Primary Examiner:

Timothy P Callahan

Assistant Examiner:

Dinh T Le

Int. Cl.
CPC ...
H03L / ; G11C / ;
U.S. Cl.
CPC ...
327172 ; 327175 ; 327512 ; 327513 ; 327176 ; 327362 ; 365222 ; 331 57 ;
Abstract

A pulse signal generating circuit includes a ring oscillator and an internal voltage generating circuit. The internal voltage generating circuit generates an internal voltage depending on an operation temperature. The internal voltage is low at a normal temperature, and is high at a high temperature. Each inverter in the ring oscillator is driven by the internal voltage supplied from the internal voltage generating circuit. Thereby, a period of a pulse signal increases at a normal temperature, and decreases at a high temperature.

Find Patent Forward Citations

Fukuda, Tatsuya. (1997). Pulse generating circuit and a semiconductor memory device provided with (U.S. Patent No. 5691661). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5691661

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