The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 1997
Filed:
Nov. 20, 1996
Applicant:
Inventor:
Ching-Nan Yang, Hsinchu, TW;
Assignee:
Mosel Vitelic Inc., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437195 ; 437192 ; 437190 ; 437198 ;
Abstract
An improved process for forming blanket planarization of the multilevel interconnection of a semiconductor substrate by LPD-SiO.sub.2 (Liquid-Phase Deposition) selective deposition technique which LPD-SiO.sub.2 is not deposited on silicon nitride, and forming silicon dioxide to achieve blanket planarization of multilevel interconnection.