The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 1997
Filed:
May. 31, 1995
Francisco Santiago, Elkridge, MD (US);
Tak-Kin Chu, Bethesda, MD (US);
Michael Stumborg, Rockville, MD (US);
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
A process for growing single crystal epitaxial BaF.sub.2 layers on gallium rsenide substrates by slowly reacting Ba, BaCl.sub.2, Bal.sub.2, BaBr.sub.2, BaF.sub.2 .cndot.BaCl.sub.2, BaF.sub.2 .cndot.BaBr.sub.2, BaF.sub.2 .cndot.BaI.sub.2, BaCl.sub.2 .cndot.BaBr.sub.2, Ba.sub.3 (GaF.sub.6).sub.2, BAH.sub.2, or BaO.sub.2 vapor with a clean, hot GaAs substrate at 500.degree. C. to 700.degree. C. in high vacuum until a uniform, thin (.about.12 .ANG.) layer of reaction product is formed and then vapor depositing BaF.sub.2 onto the reaction layer at room temperature to 400.degree. C. to form the single crystal, epitaxial BaF.sub.2 layer.