The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 1997
Filed:
Nov. 22, 1995
Applicant:
Inventors:
Didier Floriot, Chatenay Malabry, FR;
Sylvain Delage, Bures S/Yvette, FR;
Pascal Roux, Vauhallan, FR;
Juan Obregon, St Priest Taurion, FR;
Assignee:
Thomson-CSF, Paris, FR;
Primary Examiner:
Int. Cl.
CPC ...
H03F / ; H03F / ; H03F / ;
U.S. Cl.
CPC ...
330286 ; 330295 ; 330307 ;
Abstract
Disclosed is a novel topology of monolithic, microwave amplifiers with high integration. This is a more compact topology, divided into a two-level or tree-like structure in which the division of the input signal is done firstly on each transistor Tij and, secondly, on each of the elementary transistors tijk of the transistors Tij. More specifically, the input line LE is divided into different basic lines li, each line li supplying lines lij distributed on either side of said lines li, a line lij then supplying a power transistor Tij. Application to microwave amplifiers.