The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 1997
Filed:
Oct. 26, 1995
Ronald Dekker, Eindhoven, NL;
Henricus G Maas, Eindhoven, NL;
Wilhelmus T Van Den Einden, Eindhoven, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
A semiconductor device for microwave frequencies with a substrate which is provided at a first side with a semiconductor element, a passive element, and a pattern of conductive elements, while the opposed, second side is provided with a metallization which is connected to the elements present on the first side through windows formed in the substrate. The substrate consists of a silicon layer which is present on a layer of insulating material, the semiconductor element being formed in the silicon layer, and the metallization being provided on that side of the layer of insulating material which is remote from the silicon layer. The silicon layer may here have a very small thickness of, for example, 0.1 to 0.2 .mu.m. In such a thin silicon layer, bipolar and field effect transistors capable of processing signals of microwave frequencies can be formed. Since the silicon layer is thin, the influence of the conductivity of silicon on passive elements is small.