The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 1997
Filed:
Jun. 11, 1996
Jong Duk Lee, , US;
Hyung Soo Uh, Seoul, KR;
Korea Information & Communication Co., Ltd., Seoul, KR;
Other;
Abstract
The present invention provides a method for manufacturing field emitter arrays, comprising steps of forming a n.sup.+ -layer in a polycrystalline or amorphous silicon layer deposited on an insulating substrate, making an oxide layer disk pattern on said silicon layer, etching said silicon layer isotropically, forming a silicon oxide layer on the upper part of said silicon layer by means of the first oxidation, which results in field emitter tips, making hollows, depositing a silicon nitride layer with a predetermined thickness on said silicon oxide layer, removing said silicon nitride layer except that of the side-wall parts around said field emitter tips, forming a gate insulating layer by means of the second oxidation, removing said silicon nitride layer of said sidewall parts around said tips, making contact window, and forming gate electrodes and cathode contacts by depositing gate metal on said gate insulating layers. According to the present invention, field emitter arrays can be formed uniformly over a large area with pixels insulated therebetween.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile