The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 1997
Filed:
Dec. 01, 1995
David Anton Mixon, Basking Ridge, NJ (US);
Anthony Edward Novembre, Union, NJ (US);
Lucent Technologies Inc., Murray Hill, NJ (US);
Abstract
The present invention is directed to a process for device or mask fabrication. In the process, an energy sensitive resist material that is the combination of a matrix polymer and a modifier polymer is formed onto a substrate. The modifier polymer and matrix polymer are phase compatible. In this regard the modifier polymer has a weight average molecular weight of about 5,000 to about 500,000 g/mol, and at least some of the polymer chains are terminated by a halogen moiety. The resist material is patternwise exposed to radiation, thereby introducing a latent image of the pattern into the resist material. The energy depolymerizes the modifier polymer. The modifier polymer is substantially less soluble in a developer solution used to develop the pattern introduced into the resist than is the matrix polymer. Therefore, if the resist material is positive acting, the resist material that is exposed to radiation is substantially more soluble in developer solution than the unexposed resist material. The developer solution is used to selectively remove the exposed portion of the resist material, thereby developing the pattern introduced into the resist material by the patternwise exposure. The resist material is developed in an interruptive manner to reduce the amount of film loss in the portion of the resist material that is not exposed to radiation.