The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 1997
Filed:
Jun. 10, 1996
Applicant:
Inventors:
Chongwook Chris Choi, Redondo Beach, CA (US);
Niraj Ranjan, El Segundo, CA (US);
Assignee:
International Rectifier Corporation, El Segundo, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257488 ; 257372 ; 257409 ; 257500 ; 257501 ;
Abstract
A polysilicon field ring structure is used to eliminate any type of unwanted surface current leakage in an integrated power chip having high voltage and low voltage areas and enclosed in a plastic housing. All P-type diffusions not biased to the ground potential are surrounded by rings biased to the supply potential, and all N-type diffusions not biased to the supply potential are surrounded by rings biased to the ground potential.
Choi, Chongwook. (1997). Polysilicon field ring structure for power ic (U.S. Patent No. 5686754). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5686754
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile