The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 1997
Filed:
Oct. 23, 1995
Hirofumi Sumi, Kanagawa, JP;
Chigusa Yamane, Kanagawa, JP;
Sony Corporation, , JP;
Abstract
A method for forming a film of refractory metal used for interconnection in a semiconductor integrated circuit and, above all, to a method for forming a tungsten film (Blk-W film) by a blanket CVD method. A blanket tungsten (Blk-W) film 10 is formed with good adherence and coverage on an SiO.sub.X based interlayer insulating film 3 having a minute-sized contact hole 4 for improving reliability in an interconnection. Before proceeding to Blk-W-CVD, a substrate having a Ti-based adherent layer 7 on its uppermost surface is heated and exposed to a silane-based gas atmosphere for forming Si-nuclei on its surface. A W-nucleus 9 is formed by reducing the WF.sub.6 gas with H.sub.2 and a Blk-W film 10 is also formed by reducing the WF.sub.6 with SiH.sub.4 under a rate determined by the rate of the surface reaction. If the substrate is preliminarily heated before forming the Si nuclei, formation of the Si nuclei proceeds with improved uniformity. The W-nuclei may be carried out uniformly in a temperature range of 450.degree. C. or higher. If the substrate heating temperature during high speed growth is lowered to a temperature lower than that during W-nucleus formation, the thermal stress in the substrate may be released for further improving adherence between the Blk-W film 10 and the substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile