The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 1997
Filed:
Jan. 04, 1996
Applicant:
Inventor:
Chang-Jae Lee, Cheongju, KR;
Assignee:
LG Semicon Co., Ltd., Choongchungbook-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 69 ; 437 69 ; 437 56 ; 148D / ;
Abstract
An improved device isolation method for a semiconductor device capable of independently and compatibly providing an isolation film in the interior of well and an isolation film between wells during a consistent process, so that latch-up characteristic can be improved even in a device requiring a design rule of below 0.5 .mu.m, which includes a first step which combines a second step which forms a device isolation film within a well and a third step which forms a device isolation film between wells, the second and third steps being compatible to each other during the same step.