The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 1997
Filed:
Mar. 28, 1996
Dal Soo Kim, Seoul, KR;
LG Semicon Co., Ltd., Choongchungbuk-do, KR;
Abstract
A semiconductor memory cell comprising a capacitor for storing data thereon, and a first transistor being switched in response to a logic state of a word line. The first transistor writes data on a bit line into the capacitor, reads the data stored on the capacitor and transfers the read data to the bit line. The semiconductor memory cell further comprises a second transistor being switched in response to the logic state of the word line. The second transistor writes data on a bit line bar into the capacitor, reads the data stored on the capacitor and transfers the read data to the bit line bar. The semiconductor memory cell further comprises a transistor device for holding the data stored on the capacitor. According to the present invention, the semiconductor memory cell has a reduced number of devices as compared with a conventional one to enhance a chip integration degree. Also, the semiconductor memory cell prevents a current path from being formed therein to reduce its power consumption and compensates for a charge leakage to always hold its written data at a stabilized state with no loss.