The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 1997
Filed:
Jul. 02, 1996
Dah-Bin Kao, Palo Alto, CA (US);
John Pierce, Palo Alto, CA (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
The process for forming a layer of metal silicide over polysilicon structures, such as gates and interconnect lines, is simplified by forming a layer of insulation material over the polysilicon structures, removing the layer of insulation material until the layer of insulation material is substantially planar and the thickness of the insulation material over the polysilicon structures is within a predetermined thickness range, etching the planarized layer of insulation material until portions of the polysilicon structures are exposed, depositing a layer of metal over the resulting structure, and then reacting the metal layer with the polysilicon structures to form the layer of metal silicide.