The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 1997
Filed:
Feb. 22, 1996
Michael J Hartig, Austin, TX (US);
John C Arnold, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
An inductively coupled plasma reactor and method for processing a semiconductor wafer (28). The inductively coupled plasma reactor (10) includes a plasma source (16) having a plurality of channels (38, 44) in which processing gases are independently supplied to each channel. A gas supply system (20) includes a plurality of gas feed lines (34, 35, 36) each capable of supplying an individual flow rate and gas composition to the plurality of channels (38, 44) in the plasma source (16). Each channel is surrounded by an independently powered RF coil (54, 56), such that the plasma density can be varied within each channel (38, 44) of the plasma source (16). In operation, a material layer (66) overlying a semiconductor wafer (28) is either uniformly etched or deposited by localized spatial control of the plasma characteristics at each location (64) across the semiconductor wafer (28).