The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 1997
Filed:
Jun. 17, 1996
Kazushi Shirai, Tokyo, JP;
Norio Takeda, Tokyo, JP;
Mitsubishi Gas Chemical Company, Inc., Tokyo, JP;
Abstract
A method of manufacturing a bismuth-substituted rare-earth iron garnet single crystal film used for short wavelengths, includes the steps of: manufacturing a BIG-grown substrate in an LPE furnace by the LPE method, the BIG-grown substrate having a bismuth-substituted rare-earth iron garnet single crystal film grown on one surface of a non-magnetic garnet single crystal substrate, the film having a thickness in the range of 20-100 .mu.m; spinning the BIG-grown substrate at a high speed to remove a melt adhering thereto prior to taking the BIG-grown substrate out of the LPE furnace; and cooling the BIG-grown substrate to 300.degree. C. within one minute.