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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5682045 B1

PDFFull Text
Date of Patent:
Oct. 28, 1997

Filed:

Sep. 08, 1995

Method of fabricating semiconductor device and semiconductor device

Applicant:
Inventors:

Norio Hayafuji, Itami, JP;

Yoshitsugu Yamamoto, Itami, JP;

Assignee:

Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;

Attorney:

Leydig, Voit & Mayer

Primary Examiner:

Edward Wojciechowicz

Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257192 ; 257284 ; 257 12 ; 257 27 ; 257613 ; 437 82 ; 437107 ; 437126 ; 437133 ; 437247 ; 437912 ;
Abstract

An Si-doped AlInAs layer and an intrinsic AlInAs layer are successively grown on a semi-insulating InP substrate in a molecular beam epitaxy chamber. The sample is then heat-treated in a nitrogen ambient at 400.degree. C. for 18 minutes so that electrical characteristics of the sample are deteriorated because of the infiltration of fluorine into the Si-doped AlInAs layer. The sample is then placed in the molecular beam epitaxy chamber and reheat-treated in an ultra-high vacuum at 400.degree. C. for seven minutes and the fluorine is removed.

Find Patent Forward Citations

Hayafuji, Norio. (1997). Method of fabricating semiconductor device and semiconductor device (U.S. Patent No. 5682045). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5682045

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