The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 1997
Filed:
Jan. 03, 1995
Min Hwa Park, Chungcheongbuk-do, KR;
Goldstar Electron Co., Ltd., Cheongju, KR;
Abstract
A method for manufacturing a thin film transistor is disclosed. To solve the problems of leakage current generated at the grain boundary which passes through a source and a drain and the difficulty in obtaining stable device characteristic owing to the change of the lengths of the channel region and the offset region according to the degree of the overlay misalignment, the method includes the steps of forming a polysilicon layer on a substrate, forming an impurity-containing layer on the polysilicon layer, forming a prescribed pattern by patterning the impurity-containing layer, flowing the impurity-containing layer by heat treating, and crystallizing the polysilicon layer by annealing using a prescribed light source, wherein the flowed impurity-containing layer functions a lens during crystallizing the polysilicon layer to generate a partial temperature difference between the portion of the polysilicon layer where the impurity-containing layer is formed and the portion of the polysilicon layer where the impurity-containing layer is not formed.