The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 1997
Filed:
Apr. 05, 1995
George R Brandes, Danbury, CT (US);
John B Miller, Danbury, CT (US);
Advanced Technology Materials, Inc., Danbury, CT (US);
Abstract
This invention relates to electron emitting semiconductor materials for use in dynodes, dynode devices incorporating such materials, and methods of making the dynode devices. In particular, the invention relates to emissive materials having an electron affinity that is negative and which have low resistivity. The invention also relates to electronic devices such as electron multipliers, ion detectors, and photomultiplier tubes incorporating the dynodes comprising the materials, and to methods for fabricating the electronic devices. The secondary electron emitters of the present invention comprise wide bandgap semiconductor films selected from diamond, AlN, BN, Ga.sub.1-y Al.sub.y N where 0.ltoreq.y.ltoreq.1 and (AlN).sub.x (SiC).sub.1-x where 0.2.ltoreq.x.ltoreq.1. The films are preferably single crystal or polycrystalline. The films may be continuous or patterned.