The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 1997
Filed:
Feb. 05, 1996
Atsushi Yamamori, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A method for fabricating a semiconductor device includes the steps of exposing and developing a resist film applied on a conductive film formed over a semiconductor substrate, and removing a resist residue developed on the resist film. The removal of a resist residue is made by irradiating thereon the helium plasma generated using a helium gas in a parallel plate type plasma etching system. Thereafter, the conductive film is dry-etched and patterned using the resist film as a mask. The use of the helium gas plasma etching process enables the delaying of the etching rate and the suppression of the thinning of the resist film thereby enhancing the size precision of the photo mask.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile