The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 1997
Filed:
Feb. 21, 1996
Seiichiro Ohmoto, Kobe, JP;
Katsuhiro Uehara, Takasago, JP;
Hiroshi Okada, Kobe, JP;
Yoshihiko Sakashita, Takasago, JP;
Takao Kawanaka, Kobe, JP;
Kabushiki Kaisha Kobe Seiko Sho, Kobe, JP;
Abstract
Method of forming a single crystal of ZnSe. A charge of material is loaded in a container. The charge of material is melted to create a melt of material. A single crystal is grown from the melt of material. Then, the grown crystal is brought out of contact with the wall surface of the container. The temperature of the crystal is varied across its phase transition temperature range while establishing a temperature gradient from one end of the grown crystal to the other end. This method is carried out, using a crystal grower comprising the container and an elevation member. The container is disposed inside a high-pressure vessel. The container tapers off downward and is provided with a hole extending from its lower end. The elevation member is inserted into the hole from below to push the grown crystal in a crucible upward. The container is composed of plural separable parts. After the growth of the crystal, the assembled parts are moved substantially horizontally outwardly so that the parts are separated from each other.