The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 1997
Filed:
Feb. 07, 1997
Naoto Tomita, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A potential detecting circuit comprises a MOSFET, a constant current circuit, a reference potential generating circuit and a comparing circuit. A power supply potential is applied to a drain of the MOSFET and a subject potential to be detected is applied to the gate of the MOSFET. The constant current circuit is connected to a source of the MOSFET. The comparing circuit compares a reference potential output from the reference potential generating circuit with a source potential of the MOSFET. A detection output is obtained on the basis of the comparison result. The source potential of the MOSFET is increased in accordance with an increase of the subject potential. When the source potential coincides with the reference potential output from the reference potential generating circuit, the level of the source potential is detected as a detection level.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile