The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 1997
Filed:
Jul. 19, 1995
Hongyong Zhang, Kanagawa, JP;
Hideki Uochi, Kanagawa, JP;
Hiroki Adachi, Kanagawa, JP;
Itaru Koyama, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa, JP;
Abstract
An improved method of forming insulated gate field effect transistors is described. In accordance with the method, gate electrodes are formed from metal such as aluminum together with wirings electrically connecting the gate electrodes. The gate electrodes are anodic oxidized by dipping them as an anode in an electrolyte to form an oxide of the metal covering them. Since the connecting wirings are covered with a suitable organic film before the anodizing, no aluminum oxide is formed thereon so that it is easy to remove the connecting wiring by usual etching.