Semiconductor apparatus and production method for the same

Abstract

A gate wire is formed so as to extend from an active area to a separation, and an impurity diffused area is formed on each side of the gate electrode located on the active area. A contact member for connecting the gate wire to a first layer aluminum interconnection formed in an upper layer of the gate wire is in contact with the gate wire at a portion located on the active area. The utilization ratio of the active area is thus improved, and hence, the width of the separation can be minimized. In addition, by eliminating a mask alignment margin from the gate wire and suppressing the width of the gate wire not to exceed the width of the contact member, the occupied area of a semiconductor apparatus can be reduced.