The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 1997
Filed:
Nov. 22, 1996
Applicant:
Inventors:
Chan Kwang Park, Bubaleub, KR;
Yo Hwan Koh, Bubaleub, KR;
Seong Min Hwang, Bubaleub, KR;
Kwang Myoung Roh, Bubaleub, KR;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 / ; 437 / ; 437 44 ; 437203 ; 437 / ;
Abstract
A fully planarized concave transistor is produced having a structure, wherein a lightly doped drain(LDD) region and a source/drain region are formed and accumulated on a semiconductor substrate in a predetermined pattern, a thick insulating layer is formed on the surface and the sidewall of the source/drain, a gate formed between the source and drain, with a gate insulating layer is formed between the source and the gate, and between the drain and the gate to insulate therebetween.