The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 1997

Filed:

Feb. 06, 1995
Applicant:
Inventors:

Toshitsugu Takekuma, Ohme, JP;

Haruo Ii, Akishima, JP;

Kazuya Ito, Hamura, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
430 30 ; 430311 ; 430296 ; 430396 ; 430942 ; 2504911 ; 2504912 ;
Abstract

When the data of a mask pattern of a phase shift mask is to be made, the pattern data is separated into a real pattern data layer having the data of real patterns and a phase shift pattern data layer having the data of phase shift patterns. After this, it is verified whether or not the mask pattern satisfies the regulation of the gap of in-phase patterns, in which lights having transmitted through patterns adjacent to each other are in phase. It is also verified whether or not the mask pattern satisfies the regulation of the gap of out-of-phase patterns, in which lights having transmitted through patterns adjacent to each other are out of phase.


Find Patent Forward Citations

Takekuma, Toshitsugu. (1997). Process for fabricating phase shift mask and process of semiconductor (U.S. Patent No. 5677092). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5677092

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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