The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 1997
Filed:
Jan. 11, 1996
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor laser device includes, on a first conductivity type GaAs substrate, successively, a first conductivity type GaAs buffer layer, a first conductivity type Al.sub.s Ga.sub.1-s As (0<s<1) cladding layer, a quantum well active layer having a structure that can produce an oscillation wavelength of 0.9.about.1.2 .mu.m and including a well layer comprising In.sub.x Ga.sub.1-x As (0<x<1) and a barrier layer comprising Al.sub.y Ga.sub.1-y As (0<y<s), a second conductivity type Al.sub.t Ga.sub.1-t As (1<t<y) upper cladding layer, a second conductivity type GaAs contact layer, and a multiple reflection film layer alternatingly laminating first and second semiconductor materials which have the same conductivity type as the adjacent semiconductor materials and have the different refractive indices in number of layers, first and second electrodes, and a pair of laser resonator facets perpendicular to the active layer and the multiple reflection film layer. Therefore, a semiconductor laser device in which generation of large mode hops is suppressed, the generation of kinks is reduced, and stable and high power output laser beams are produced is realized.