The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 1997

Filed:

Aug. 01, 1996
Applicant:
Inventors:

Hiroshige Hirano, Nara, JP;

Nobuyuki Moriwaki, Kyoto, JP;

Tatsumi Sumi, Osaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365145 ; 365149 ; 365190 ;
Abstract

In a ferroelectric memory device comprising a ferroelectric capacitor as the memory cell capacitor, after applying a predetermined electric field to a main body memory cell capacitor C0 or C1 to conduct a writing operation, the electric field applied to the memory cell capacitor C0 or C1 is made zero. The operation is conducted so as not to apply an electric field on the ferroelectric capacitor. As a consequence, characteristic deterioration of the ferroelectric capacitor can be reduced to prevent the malfunction of the ferroelectric memory device.


Find Patent Forward Citations

Hirano, Hiroshige. (1997). Ferroelectric memory device (U.S. Patent No. 5675530). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5675530

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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