The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 1997
Filed:
Jan. 05, 1996
Tomoki Oku, Tokyo, JP;
Nobuyuki Kasai, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device includes a compound semiconductor body having a recess, the recess having a bottom and a hollow, and a refractory metal gate electrode having a lower portion within the hollow. The compound semiconductor body includes a compound semiconductor substrate; a channel layer including a compound semiconductor of a first conductivity type, the channel layer being located on the substrate between the gate electrode and the substrate; first active layers of the compound semiconductor and of the first conductivity type located on regions of the substrate in the recess where the channel layer is not present; and second active layers of the compound semiconductor and of the first conductivity type located on regions of the substrate in the recess where the channel layer is not present; and second active layers of the compound semiconductor of the first conductivity type located on regions of the substrate sandwiching the recess. Therefore, the controllable region in the channel layer is not adversely affected by a depletion layer produced at the interface between the first active layers and a passivation film, whereby an unwanted reduction in the control speed in the channel layer due to the charging and discharging of carriers in traps at the interface is avoided.