The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 1997
Filed:
Sep. 14, 1994
Applicant:
Inventors:
Yasuo Tarui, Higashikurume City, Tokyo, JP;
Yoshihiro Soutome, Osaka, JP;
Shinichi Morita, Yokosuka, JP;
Satoshi Tanimoto, Tokyo, JP;
Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
427250 ; 4272551 ; 4272552 ; 4272553 ; 4273762 ;
Abstract
A ferroelectric thin film is produced on a substrate placed in an oxygen gas atmosphere within a reaction chamber. Evaporated source materials (organic metal compounds) are separately introduced in a predetermined sequence into the reaction chamber to produce a PZT or PLZT layer structure having an estimated stoichiometric composition. This cycle of introduction of the source materials is repeated continuously to produce a PZT or PLZT ferroelectric thin film having a predetermined number of PZT or PLZT layer structures piled on the substrate.