The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 1997
Filed:
Aug. 23, 1996
Applicant:
Inventors:
Tomoyasu Miyata, Shiga-ken, JP;
Koichi Sakamoto, Ohtsu, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257472 ; 257473 ; 257483 ; 257484 ; 257496 ; 257623 ;
Abstract
A Schottky barrier diode having improved breakdown characteristics has an n.sup.+ semiconductor layer and an n.sup.- semiconductor layer provided on the n.sup.+ semiconductor layer. The n.sup.- semiconductor layer is configured to form a mesa. An insulating layer is formed so as to expose the upper surface of the mesa. An anode electrode is provided on the exposed surface and a side surface of the mesa, while a cathode is electrically connected to the n.sup.+ layer. A plasma treated layer is provided in the n.sup.- semiconductor layer so as to extend inwardly from at least a portion of the side surface of the mesa.