The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 1997
Filed:
Oct. 19, 1995
Hiroshi Maeda, Reutlingen, DE;
Susumu Ueda, Nukata-gun, JP;
Hiroshi Fujimoto, Nagoya, JP;
Yoshiaki Nakayama, Nukata-gun, JP;
Nippondenso Co., Ltd., Kariya, JP;
Abstract
The resistance to electromigration in a double-layer Al wiring structure of lateral DMOS or the like is improved by further reducing ON resistance and mitigating current concentration. The first-layer source wiring and the first-layer drain wiring which are electrically connected to a plurality of source cells and drain cells respectively are formed into a pectinate pattern respectively. The second-layer source wiring and the second-layer drain wiring are also formed into a pectinate pattern respectively and disposed in inclination at 45 degrees to the patterns of the first-layer source wiring and first-layer drain wiring. At the intersections of the first-layer source wiring and the second-layer source wiring, at the intersections of the first-layer drain wiring and the second-layer drain wiring, at the outer circumferential portions of the pectinate patterns of first-layer source and drain wirings and at the source and drain pads, contact holes are provided on a layer insulation film to make a contact between the first-layer source and drain wirings and the second-layer source and drain wirings, respectively.