The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 1997

Filed:

Mar. 03, 1995
Applicant:
Inventor:

David A Robinson, Oceanside, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257443 ; 257446 ; 257458 ; 257461 ; 2502081 ; 250332 ; 25037014 ;
Abstract

Methods are disclosed for fabricating a monolithic array of radiation detectors and associated readout circuits, as are monolithic arrays fabricated by the methods. One method includes the steps of (a) providing a first substrate (10) having a first major surface (10a) and an oppositely disposed second major surface (10b); (b) doping the first major surface with a dopant having a first type of electrical conductivity to form a first doped region (12) adjacent to the first major surface; (c) forming an electrically insulating dielectric layer (14) on the first major surface; (d) thermally bonding a second substrate to the dielectric layer and thinning the second substrate to provide a semiconductor layer (16) having a predetermined thickness; (e) delineating the semiconductor layer into a plurality of adjacently disposed electrically isolated regions each of which corresponds to a radiation detector unit cell; (f) fabricating a readout integrated circuit (17) within a portion of the semiconductor layer within each of the unit cells; (g) conductively coupling (22, 23) each of the readout integrated circuits to an underlying portion of the first doped region; and (h) doping the second major surface with a dopant having a second type of electrical conductivity to form a second doped region (24) adjacent to the second major surface. The second major surface is a radiation receiving surface of the monolithic array.


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